PEP 3510A Specifications

Process

Dual Chamber Single Wafer Photoresist Removal System
Applications Bulk Ash, HDIS, Descum
Throughput 120 WPH streaming (1.2μm blanket soft-baked resist ashed to endpoint)
Ash Rate ≥3.5μm/min.
Uniformity Within-Wafer ≤5.0% (1σ)
Wafer-to-Wafer ≤3.0% (1σ)
Gases O2, N2 and N2/H2 typical gases
Temperature Range 100–300°C
Microwave Range 0–1.2 kW, 2.45 GHz
Particles < 0.05/cm2, ≥ 0.2μm

Facilities Information

Wafer Size 6–8 inch (150–200mm)
Footprint 48" (122cm ) W X 63" (160cm ) D X 83" (210cm)
Gas Box Configuration 2 gas boxes (1 per chamber) with 3 or 4 MFC’s per box
Electrical 200–240 VAC, 150 Amp breaker, 3 Phase, 50/60 Hz, WYE configuration
Air Exhaust 200 CFM per chamber
Cooling Water 1.5 GPM per chamber
Vacuum >250 CFM per chamber
>10 slpm @ 25" Hg for robot

Note: Novellus guarantees that the films will meet the listed specifications when deposited using standard Novellus process conditions and measured according to Novellus recommended procedures.

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