Novellus Concept One Specifications

	SiO2
Film Thickness Range	2,000–20,000Å
Within-Wafer Thickness Uniformityy	100,125,150mm ≤ 1.0%(1σ) 200mm ≤ 1.5%(1σ)
Wafer-to-Wafer Thickness Reproducibility	≤ 1.0% (1σ)
Run-to-Run Thickness Reproducibility	≤ 1.5% (1σ)
Refractive Index	1.465 ± 0.015
Film Stress	Undoped <1.5 X 109 dynes/cm2 Compressive Doped Dopant concentration dependent
Dopant Uniformity	± 0.1 wt%
Dopant Reproducibility	± 0.2 wt%
Pinholes	≤ 0.01/cm2
Particles (1,000Å film)	≤ 0.2/cm2 (Particles ≥ 0.3μm)

Standard Novellus Deposition	Parameters
Chemistry	SiH4, N2O, N2, B2H6 (5% in N2), PH3 (5% in N2)
Pressure	2.2 Torr
Temperature	400°C
RF Power	0.4 Watt/cm2
RF Frequency	13.56 MHz
Deposition Rate	Undoped 4,400 Å/min Doped 5,500 Å/min

Note: Novellus guarantees that the films will meet the listed specifications when deposited using standard Novellus process conditions and measured according to Novellus recommended procedures. The above guaranteed specifications apply to 100, 125, 150 and 200mm wafers, except where otherwise noted.

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