Concept Two Sequel Specifications

	PECVD Silane Oxide 125–200mm	PECVD Nitride 125–200mm	PECVD TEOS 125–200mm
Film Thickness Range	2,000–20,000Å	2,000–20,000Å	1,000–20,000Å
Within-Wafer Thickness Uniformity	≤ 1.0% (1σ)	≤ 1.5% (1σ)	≤ 1.0% (1σ)
Wafer-to-Wafer Thickness Reproducibility	≤ 1.0% (1σ)	≤ 1.5% (1σ)	≤ 1.0% (1σ)
Run-to-Run Thickness Reproducibility	≤ 1.0% (1σ)	≤ 1.5% (1σ)	≤ 1.0% (1σ)
Manufacturability	Cp > 3@ full throughput	Cp > 2@ full throughput	Cp ± 3@ full throughput
Particulates (1,700Å film)	≤ 0.1d/cm2 ≥ 0.2μm	≤ 0.1/cm2 ≥ 0.2μm	≤ 0.1/cm2 ≥ 0.2μm
Step Coverage (1:1 AR, 0.6μm space, 2,000Å film)	≥ 50%	≥ 60%	≥ 60%
Refractive Index	1.465 ± 0.015	2.02 ± 0.03	1.460 ± 0.010
Film Stress	1 ± 0.5 E9 dynes/cm2 compressive	0.5–2.0 E9 dynes/cm2 compressive	0.5–1.5 E9 dynes/cm2 compressive
Pinholes	≤ 0.01/cm2	≤ 0.01/cm2	≤ 0.01/cm2
P Dopant Level	-	-	<2E20/cm2
Dopant Uniformity	-	-	<5E19/cm3
Dopant Reproducibility	-	-	≤ 0.01/cm2

Standard Novellus Deposition	Parameters
Chemistry	SiH4, N2O	SiH4, NH3, N2	TEOS, O2
Pressure	2–5 torr	2–5 torr	2–5 torr
Temperature	400°C	400°C	350°C
Deposition Rate	>4,200Å/min	>1,700Å/min	>2,700Å/min

Note: Novellus guarantees that the films will meet the listed specifications when deposited using standard Novellus process conditions and measured according to Novellus recommended procedures.

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