Concept Two Speed Specifications
| HPD Gap Fill 150–200mm |
HDP USG IMD 200mm |
HDP USG STI 200mm |
|
|---|---|---|---|
| Film Thickness Range | 5,000–10,000 Å | 4,000–10,000 Å | 4,000–10,000 Å |
| Within-Wafer Thickness Uniformity |
≤4.0% (1s) | <4.0% (1s) | 1.5% (1s) |
| Wafer-to-Wafer Thickness Reproducibility (center points) |
≤2.0% (1s) | <2.0% (1s) | <1.0% (1s) |
| Particulates (1,700Å film) | <0.1d/cm2 @0.2μm | <0.1d/cm2 @0.2μm | <0.1d/cm2 @0.2μm |
| Refractive Index | 1.465 ± 0.01 | 1.460 ± 0.01 | 1.465 ± 0.01 |
| Film Stress (E9 dynes/cm2) |
–1.5 to –2.0 compressive |
–1.8 ± 0.5 compressive |
2.0 – 2.5 compressive |
| Pinholes | ≤0.01/cm2 | ≤0.01/cm2 | ≤0.01/cm2 |
| Void Free Gap Fill | <2.5:1 AR @ 0.25μm space | <2.5:1 AR @ 0.25μm space | 3:1 AR @ 0.20μm space |
| Standard Novellus Deposition | Parameters | ||
|---|---|---|---|
| Chemistry | SiH4, Ar, O2 | Ar, O2, SiH4 | He, O2, SiH4 |
| Pressure | <10 torr mT | <10 torr mT | <10 torr mT |
| Temperature | <400°C | 350 ± 15°C | <600°C |
| Deposition Rate | >3,000Å/min | >5,000Å/min (BC) | >5,000Å/min (BUC) |
Note: Novellus guarantees that the films will meet the listed specifications when deposited using standard Novellus process conditions and measured according to Novellus recommended procedures.
Go back to Concept Two Speed