Technical Specifications

• Technical Specifications

  • Film Thickness Range 2,000-20,000Å
  
  
  • Within-Wafer 100,125,150mm <1.0%
  • Thickness Uniformity 200mm <1.5%
  
  
  • Wafer-to-Wafer
  • Thickness Reproducibility <1.0%
  
  
  • Run-to-Run
  • Thickness Reproducibility <1.5%
  • Refractive Index 1.465 ± 0.015
  
  
  • Film Stress
  • Undoped <1.5 x 10^9dynes/cm²
  • Compressive
  • Doped Dopant concentration dependent
  • Dopant Uniformity ±0.1 wt%
  • Dopant Reproducibility ±0.2 wt%
  • Pinholes <0.01/cm²
  • Particles (1,000º film) <0.2/cm² (Particles >0.3µm)

• Standard Novellus Deposition Parameters

  • Chemistry SiH
  • 4,N2O,N2,B2H6,
  • PH3 (5% in N2)
  
  
  • Pressure 2.2 Torr
  • Temperature 400ºC
  • RF Power 0.4 Watt/cm²
  • RF Frequency 13.56 MHz
  
  
  • Deposition Rate
  • Undoped 4,400Å/min
  • Doped 5,500Å/min

• Downloads

  • Process specifications available upon request.